wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) upto 150W and Monolithic Microwave Integrated Circuits (MMICs) up to 40W for applications up to X-band ...
Solid State Physics Laboratory, a DRDO laboratory, has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide (SiC) wafers and fabricating Gallium ...
New Delhi [India], November 11 (ANI): Solid State Physics Laboratory, a DRDO laboratory, has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide ...
wafers. Additionally, SSPL has advanced capabilities in fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) with power ratings up to 150W and Monolithic Microwave Integrated ...
It offers silicon carbide and GaN materials, including silicon carbide bare wafers, epitaxial wafers, and GaN epitaxial layers on silicon carbide wafers to manufacture products for RF, power, and ...
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