X-FAB and SMART Photonics recently signed a Memorandum of Understanding to formalise their collaboration. The aim is to ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Compound Semiconductor™ is an Angel Business Communications publication.

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...

Compound Semiconductor™ is an Angel Business Communications publication.

Sivers Semiconductors, the Swedish specialist in photonics and wireless technologies, has announced its Q3 2024 results, ...

At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the PAC5556A + ICeGaN evaluation kit (EVK). This collaboration combines Qorvo's high ...

Looking further ahead, Martinovic expects microLEDs, including those he is helping to pioneer, to penetrate the automotive industry, due to their high level of robustness. MicroLEDs may also take ...

For GaN electronics, which serves both the power and RF sectors, evidence of its rapid rise is seen in its double-digit rises ...

Martin McHugh, CEO of CSA Catapult said: “The purpose of CSA Catapult is to deliver long-term economic benefit to the UK, ...

Stellantis N.V. and Infineon Technologies will work jointly on the power architecture for Stellantis’ electric vehicles to ...