Chemical-mechanical polishing - Wikipedia
Chemical mechanical polishing (CMP) (also called chemical mechanical planarization) is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. [1]
Copper chemical mechanical planarization (Cu CMP) challenges …
Jan 1, 2022 · Copper chemical mechanical polishing (Cu CMP) is a critical process in the fabrication of high performance microprocessors and other advanced memory devices. It was implemented in manufacturing at the 0.27 μm technology node and has been steadily evolving as interconnect scaling continued at a rapid pace during the past decades.
Copper has lower resistivity and higher electromigration immunity compared to Al. However, unlike Al, copper can not be easily plasma etched, and one must resort to a damascene process and use CMP (Chemical Mechanical Polishing) to remove the excess copper and barrier materials, thereby accu-rately defining the copper lines in the trenches.
Material Removal Mechanism of Copper CMP from a Chemical
Sep 19, 2012 · The material removal in chemical–mechanical planarization/polishing (CMP) of copper involves both chemical and mechanical effects. The roles of chemical corrosion, abrasive wear, and their synergistic effects on the material removal mechanism were studied by electrochemical analysis and nano-scratching method using atom force microscopy ...
Dishing-free chemical mechanical planarization for copper films
May 5, 2021 · The importance of obtaining a dishing-free Cu-film chemical-mechanical planarization (CMP) has rapidly increased as the line width of Cu-wire integration in advanced semiconductor devices reduced to less than 10 nm.
The process consists of three steps with different polish slurries, and is designed to polish copper with a tantalum based barrier, and to achieve good defect performance. Patterned test wafers were processed and characterized to investigate the effect of …
Chemical Mechanical Planarization (CMP) - Wiley Online Library
Aug 20, 2019 · Chemical mechanical planarization (CMP) is an offshoot of conventional polishing which was developed for use in fabrication of semiconductor devices. CMP has grown to become an enabling technology in semiconductor device fabrication.
Copper CMP | 4 | Nanoparticle Engineering for Chemical …
The CMP is used to planarize the barrier metal, low-k, and copper layer following their deposition process. Dishing of copper lines is among the most important issues of copper CMP. Cu electropolishing technology has been explored as a replacement of the Cu …
Effects of pattern characteristics on copper CMP - IOPscience
Apr 1, 2009 · Copper chemical mechanical polishing (CMP) is influenced by geometric characteristics such as line width and pattern density, as well as by the more obvious parameters such as slurry chemistry, pad type, polishing pressure and rotational speed.
Copper CMP suffers from well-known but poorly understood dishing, erosion, and other pattern dependent problems. We advocate the systematic study and characterization of these pattern dependencies through the use of electrical and physical test structures and measurements.